Silicon comprises 90% of almost all integrated-circuits and photovoltaics and a great percentage of detectors deployed worldwide today. Investments in Si-FABs has exceeded $64 billion for the first time ever in 2018 and is posed to grow further in the next coming years. One segment that is enjoying remarkable growth exceeding 25% is Si-photonics with numerous applications in the pipelines serving the trend of increasing device speed and functionality. One investment of the Emirate of Abu Dhabi, Global Foundries, is heavily entrenched in Si-photonics; but all the new products such as Si-Transceivers operates currently with III-V compound emitters integrated with Si due to the fact that Si is an indirect bandgap semiconductor with low emission efficiency. This research aims to revolutionize the industry by introducing monolithic all Si-photonic devices via realization of efficient Si light emitters at the bandgap based on novel techniques that proved two order of magnitude efficiency enhancement prototypes.