Dr. Adel Gougam
Assistant Professor, Department of Mechanical Engineering
Prof. Gougam’s areas of expertise are Photovoltaic device fabrication (mainly Si wafer based), including a number of layer deposition techniques (PECVD, PVD), clean room processes for nanofabrication, semiconductor device physics and electrical characterization of nanostructures (semiconducting and metallic nanowires).
Prior to joining Masdar Institute (in August 2011), he was heading the task force on heterojunction based Si solar cells at imec vzw (Belgium) focusing on Si back contacted cells. Dr Gougam is co-inventor of two pending IP rights in the field of PECVD deposition. He also spearheaded the work of an R&D team of a solar cell company in Canada working on proprietary PECVD system to develop a-Si/c-Si heterojunction solar cells
- MSE 509: Electrical, Optical and magnetic properties of materials (core course of the program).
- MSE 650: High efficiency Silicon solar cells: designs and technologies
- High Efficiency Solar cells for industrial applications.
- Novel solar cell concepts and innovative materials / devices for photovoltaics, nanotechnology for solar energy applications.
- MEMS for Energy harvesting.
- Laser based processes for Photovoltaics.
- Materials studies for power electronics devices
- Ali Badar M. Alamin Dow, Keith Leong, Adel B. Gougam, Hossein Alizadeh, Nazir P. Kherani “PECVD deposition and characterization of silicon oxynitride for optical applications” SPIE Microtechnologies (vol 8069), (integrated photonics: materials, devices and applications) Prague, Czech Republic. April 2011
- Zahidur R. Chowdhury; Alongkarn Chutinan; Adel B. Gougam; Nazir P. Kherani; Stefan Zukotynski “2D modeling of the back amorphous-crystalline silicon heterojunction (BACH) photovoltaic device” (proceedings paper: SPIE , photonics north 2010, Vol 7750) September 2010.
- Bahardoust, B ; Chutinan, A ; Leong K ; Gougam, A.B ; Leong, K ; Yeghikyan, D ; Kosteski, T ; Kherani, N.P ; Zukotynski, S “Passivation study of the amorphous-crystalline silicon interface formed using DC Saddle Field glow discharge” Physica Status Solidi (a) Vol 207, issue 3, pp 539, March 2010.